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We have realized the epitaxial growth of ultrathin δ-NbN films on 3C-SiC/HRSi substrates. Even with a thickness of 1.3 nm (~3 unit-cells), the δ-NbN film shows a superconducting transition above 8 K. The critical current of 2.7 nm film is 0.59 mA, corresponding to critical current density of 2.2 MA/cm2.
Epitaxial ultrathin NbN superconducting films for Terahertz application
Wang, Chun-Lun
Engineer
photo of Wang, Chun-Lun
Office: ASMAB 1006
TEL: +886-2-2366-5334
FAX: +886-2-2367-7849
Email: clwang_replace2@_asiaa.sinica.edu.tw

Research Interests

Topological insulator, Solid state devices fabrication

Journal Papers affiliated with ASIAA

  1. Wang C-L; Chiu C-P; Huang P-J; Wang S-Y; Wang M-J, "High-performance 1–10 THz integrating sphere" , Applied Optics: 60(13), p.3784, May, 2021 [SCI] ( ADS | Fulltext )
  2. Chang HW; Wang CL; Huang YR; Chen TJ; Wang MJ, "Growth and characterization of few unit-cell NbN superconducting films on 3C-SiC/Si substrate" , Supercond Sci Tech: 30, 115010, Nov, 2017 [SCI] ( ADS | Fulltext )
  3. Wang M-J; Wang J-W; Wang C-L; Chiang Y-Y; Chang H-H, "Graphene-based Terahertz Photodetector by Noise Thermometry Technique" , Appl Phys Lett: 104, 033502, Jan, 2014 [SCI] ( ADS | Fulltext )
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